Sic MOSFET Technology

Silicon Carbide (SiC) MOSFETs represent the cutting edge of power semiconductor technology. Engineered for peak efficiency in high-frequency applications, these modules offer superior thermal conductivity and significantly reduced switching losses compared to traditional silicon counterparts.

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Technical Specifications

Optimized for ultra-efficient power conversion and high-density industrial applications.

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Low Switching Losses

Optimized gate charge and low capacitances enable high-frequency operation with minimal thermal dissipation.

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High-Temp Stability

SiC technology allows for continuous operation up to 175°C, reducing cooling requirements for power electronics.

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Rugged Reliability

Excellent cosmic ray robustness and high avalanche capability ensure long-term stability in harsh environments.

Target Applications & Use Cases

Optimized SiC MOSFET solutions designed for next-generation power conversion across mission-critical sectors.

Reference Operating Conditions

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Automotive

EV main inverters, on-board chargers (OBC), and DC/DC converters.

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Renewable Energy

Solar string/central inverters and Energy Storage Systems (ESS).

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Industrial Automation

Motor drives, welding equipment, and high-voltage power supplies.

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Data Centers

Uninterruptible Power Supplies (UPS) and server power units.

Voltage Classes

650V / 1200V / 1700V

Switching Frequencies

Up to 150 kHz

Operating Temperature